FERROELECTRIC MEMORY DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A ferroelectric memory device and a method for forming the same are provided to prevent the electrical connection between a strip line and a plate line and to stably keep a contact resistance between the plate line and an upper electrode. CONSTITUTION: A first and a second interlayer dielectric(408,414) are formed on a semiconductor substrate(400). Lower electrodes(418) electrically connected with the semiconductor substrate(400), ferroelectrics(420) and upper electrodes(422) are sequentially formed to form ferroelectric capacitors(424). After forming a third interlayer dielectric(426) on the resultant structure, the planarization is performed to expose the upper electrodes(422) by etching the third interlayer dielectric(426). Then, a conductive layer is formed on the entire surface of the resultant structure. Then, plate lines(430) are formed to directly contact with the upper electrodes(422) by patterning the conductive layer.