METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT IN DEVICE COMPRISING PLASMA PRETREATMENT MODULE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor element in which the process time can be shortened by performing a series of pretreatment steps for depositing a subsequent film after making contact holes on a semiconductor substrate in a clustered plasma system. SOLUTION: After making contact holes for exposing a substance containing silicon formed on a semiconductor substrate using a photoresist pattern as an etching mask, the semiconductor substrate is loaded in a cluster system where a plasma pretreatment module and a deposition module are coupled under vacuum state. Subsequently, the semiconductor substrate is transferred to the plasma pretreatment module where the photoresist pattern is removed by ashing and a damaged layer at the lower part of the contact hole is removed and then pretreatment cleaning is performed before a subsequent film is deposited in the contact hole. Thereafter, the semiconductor substrate subjected to pretreatment cleaning is transferred to the deposition module while sustaining vacuum and the subsequent film is deposited in the contact hole.