GAN SURFACE EMITTING LD COMPRISING SPACER FOR EFFECTIVELY DIFFUSING HOLES BETWEEN P TYPE ELECTRODE AND ACTIVE LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A GaN surface emitting LD(Laser Diode) is provided to secure a stable light mode by an effective hole diffusion to a center portion of a laser emission window. CONSTITUTION: A GaN surface LD comprises an active layer(40), a p-type and an n-type material layers(m1,m2) fronting each other using the active layer(40) as a center portion, a first Bragg reflective layer(49) formed on the rear surface of the n-type material layer(m2), n-type electrodes(47) capable of supplying a voltage for the active layer(40) through the n-type material layer(m2), a spacer(48) having a laser emission window(48b) on the p-type material layer(m1) corresponding to the first Bragg reflective layer(49), a second Bragg reflective layer(52) formed on the laser emission window(48b) and p-type electrodes(50) capable of supplying a voltage for the active layer(40) through the p-type material layer(m1).