发明名称 |
ABRASIVE LIQUID FOR METAL |
摘要 |
<p>PROBLEM TO BE SOLVED: To form a buried pattern which maintains high CMP rate and is excellent in reliability by reducing etching rate sufficiently. SOLUTION: This abrasive liquid for metal contains oxidizing agent of metal (1), metal oxide dissolving agent (2), first protective film forming agent (3) which is amino acid or azole group and with which a protective film is formed on a surface of a metal film by physical sucking and/or formation of chemical bonding, second protective film forming agent (4) which is polyacrylic acid or polyamide acid or salt of polyamide acid and assists the first protective film forming agent to form a protective film, and water (5).</p> |
申请公布号 |
JP2002222782(A) |
申请公布日期 |
2002.08.09 |
申请号 |
JP20010371089 |
申请日期 |
2001.12.05 |
申请人 |
HITACHI CHEM CO LTD;HITACHI LTD |
发明人 |
UCHIDA TAKESHI;MATSUZAWA JUN;HOSHINO TETSUYA;KAMIGATA YASUO;TERASAKI HIROKI;HONMA YOSHIO;KONDO SEIICHI |
分类号 |
B24B37/00;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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