| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has STI structure capable of improving the properties of a DRAM element while reducing the lead current of a P-FET, and to provide its manufacturing method. SOLUTION: This semiconductor device has a semiconductor substrate where the first region including the first trench therein and the second region including the second trench therein are limited, the first side wall oxide film which is made on the inner surface of the first trench, the second side wall oxide film which is made on the inner surface of the second trench and is shallower than the first side wall oxide film, liners for stress absorption which are made severally on the surfaces of the first and second side wall oxide films, and insulators which are buried in the first and second trenches. The first region is a region which separates P-FETs from each other; and the second region is a region which separates N-FETs from each other, an N-FET and a P-FET from each other, an N-FET and other circuit elements from each other, a P-FET and other circuit elements from each other, or other circuits from each other. |
