发明名称 |
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained |
摘要 |
The process consists in depositing, by chemical vapour deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450° C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.
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申请公布号 |
US6429098(B1) |
申请公布日期 |
2002.08.06 |
申请号 |
US20000659913 |
申请日期 |
2000.09.11 |
申请人 |
FRANCE TéLéCOM |
发明人 |
BENSAHEL DANIEL;CAMPIDELLI YVES;HERNANDEZ CAROLINE;RIVOIRE MAURICE |
分类号 |
C30B25/02;H01L21/20;H01L21/205;(IPC1-7):H01L21/20 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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