发明名称 Semiconductor cathode with increased stability
摘要 The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns by means of separate emission regions, whose overall surface area is much smaller than that of the actual emission patter. Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained.
申请公布号 US4890031(A) 申请公布日期 1989.12.26
申请号 US19890298819 申请日期 1989.01.18
申请人 U.S. PHILIPS CORP. 发明人 ZWIER, JAN
分类号 H01J1/30;H01J1/308;H01J29/04;H01J31/12 主分类号 H01J1/30
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