DISSOLVING METHOD OF SILICON LAYER FORMED ON SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a dissolving method of a silicon layer formed on a silicon wafer. SOLUTION: It is possible to dissolve selectively only the silicon layer formed on the silicon wafer by using an aqueous solution of tetraalkyl ammonium hydrooxide and to reuse the silicon wafer. By analyzing a slight amount of metal constituent contained in the meltage, it is possible to analyze the slight amount of metal contained in only the silicon layer.