| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high quality piezoelectric element having a small quantity of defects, and also to provide a method of forming a thin film, which enables the formation of a high-quality piezoelectric thin film. SOLUTION: The piezoelectric element comprises a perovskite piezoelectric thin film, including Pb, Zr, and Ti, and an oxide thin film which includes no Zr formed between the piezoelectric thin film and a diaphragm or electrode which also serves as a diaphragm.</p> |
