| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a multi-level non-volatile memory in which making Y addresses a multi-level and improving efficiency of write-in operation are realized. SOLUTION: Stored information of two bits value or more is stored in one memory cell, a different Y address is allotted to respective bit at the time opt write-in operation, a storage state of a memory cell is read out and it is compared with data to be written, an erasure state and write-in data corresponding to the erasure state are detected, other than the above, after erasure operation, write-in operation corresponding to the write-in data is performed.</p> |
