| 摘要 |
PROBLEM TO BE SOLVED: To provide an substrate with ITO pattern or the like wherein grinding process is eliminated and there is no need of short circuit preventing insulating layer and there is no residue. SOLUTION: Oxides of In and Sn are used as a target, and ITO film is prepared on a substrate by a sputtering method while maintaining the substrate temperature lower than the crystallization temperature of the ITO film, and when the heat-treatment is applied after having formed the ITO pattern by the etching of the ITO film using etchant of solution temperature of 35 deg.C or less, the edge part of the ITO pattern becomes in a taper state, and the residue of crystallite does not substantially exist at the site where the pattern on the substrate is not installed.
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