METHOD FOR FORMING THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a thin film on a substrate using plasma processing, which can realize high speed film forming and a high quality film at the same time. SOLUTION: When the thin film is formed on a substrate using a plasma processing, a partial pressure of material gas is set in 3 Torr or higher. A ratio (dilution of hydrogen) of a supply quantity of hydrogen gas to a supply quantity of material gas is set at 3 to 14. A heating temperature of substrate is set at 160 deg.C to 280 deg.C.