发明名称 PATTERN DEPENDENT SURFACE PROFILE EVOLUTION OF ELECTROCHEMICALLY DEPOSITED METAL
摘要 A process for depositing a metal structure, such as copper interconnects, on a surface of a workplace, such as a semiconductor wafer, the workpiece surface defining a plurality of recessed microstructures. The surface of the workpiece is exposed to an electroplating bath including copper ions to be deposited on the surface and an organic additive that influences the metal ions to be preferentially deposited within the recessed microstructures relative to the remainder of the surface. Electroplating power is then provided between the exposed surface of the workpiece and the anode for a first time period such that the copper ions are deposited on the surface and nominally fill the recessed microstructures. The electroplating power is then reversed between the anode and exposed surface of the workpiece during at least a portion of a second time period to limit the deposition of further copper over the nominally filled recessed microstructures, relative to the remainder of the surface, to ameliorate the development of a "momentum plating" overburden bump of metal over the recessed microstructures. In a preferred embodiment, the reverse electroplating power is supplied in a series of reverse power pulses interspersed with forward power pulses. In addition to the pulsed reverse power application reverse power may also be applied during a sustained time period. An apparatus is also provided for carrying out the process utilizing reverse power application to ameliorate momentum plating bump formation.
申请公布号 EP1225972(A2) 申请公布日期 2002.07.31
申请号 EP20000975648 申请日期 2000.09.25
申请人 SEMITOOL, INC. 发明人 RITZDORF, THOMAS, L.;FULTON, DAKIN, J.;CHEN, LINLIN
分类号 C25D3/38;C25D5/18;(IPC1-7):B01F5/10;B01F3/04;C02F3/12 主分类号 C25D3/38
代理机构 代理人
主权项
地址