发明名称 DFB SEMICONDUCTOR LASER DEVICE
摘要 A distributed feedback (DFB) semiconductor laser device has a multiple-quantum-well (MQW) structure and a diffraction grating formed in the MQW structure. The diffraction grating includes a grating structure formed in QW layers and a barrier layer of the MQW structure and an embedded layer embedded in the grating structure. One of the QW layers and the barrier layers has an etching rate lower than the etching rate of the other layers of the MQW structure and functions as an etching stop layer during etching of the MQW structure for forming the diffraction grating.
申请公布号 CA2361171(A1) 申请公布日期 2002.07.31
申请号 CA20012361171 申请日期 2001.11.02
申请人 THE FURUKAWA ELECTRIC CO., LTD. 发明人 FUNABASHI, MASAKI;ARAKAWA, SATOSHI
分类号 G02B5/18;H01L21/205;H01L21/302;H01L21/3065;H01S5/042;H01S5/12;H01S5/20;H01S5/34;H01S5/343;(IPC1-7):H01S5/34 主分类号 G02B5/18
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