| 摘要 |
A second interlayer film is etched by an etching gas including fluorocarbon gas after a switch box is switched so that high frequency electricity is applied to an upper electrode. Then, the switch box is switched so that low power electricity is applied only to a lower-electrode/wafer-holder to generate plasma with using only fluorocarbon gas. The generated plasma etches a first interlayer film, and fluorine radicals dissociated from the fluorocarbon removes a hardened resist surface layer. It realizes etching with less damage on bases, because energy of incident ions is low.
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