| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor electrostatic capacity sensor by which the non-defect rate hardly lowers due to uneven distance or projections in spacing even if the distance between a fixed electrode and a movable electrode is made small. SOLUTION: A recessed part for gap which is formed in a silicon is formed in order, in a step for forming an oxide film, a step for patterning the oxide film to remove the oxide film in the recessed part formation area, a thermal oxide formation step for forming a thermal oxide film through heat treatment in an oxidizing atmosphere, and a thermal oxide film removing step for entirely removing the oxide film. In this case, the speed of production of thermal oxide film varies in a part having an oxide film and in a part having no oxide film, by which the recessed part for the gap is formed on the surface of silicon through production and removal of the thermal oxide film. Due to thermal oxidization, no influence of foreign substance adhering to its surface is given, and a recessed part having an excellent shape can be obtained.
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