| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables to completely remove the tungsten that is deposited on a wall, and to provide a manufacturing method of the semiconductor. SOLUTION: This semiconductor device is provided with a first metal wire 52, which is installed via an insulating film 54 at the upper part of a semiconductor substrate 56, and a contact hole 58 and a bonding pad 60, which are formed at the upper part of first metal wire 52, on interlayer insulating film 55 that is installed in the whole upper part of semiconductor substrate 56. Contact hole 58 is made of a vertical hole part, inside which tungsten 67 can be embedded, while a slope is formed for a wall 60A of bonding pad 60. In semiconductor device 50 having such a configuration, a sidewall is will not be formed on the wall 60A, when the tungsten 67 deposited on the wall 60A is etched back and removed through a CVD process. Thus, it is possible to prevent the sidewall from peeling off and turning into dust particles.
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