| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, where voltage transfer of a polymetal gate electrode is prevented from being delayed by decreasing interfacial resistance of a polysilicon film. SOLUTION: A gate electrode structure is provided which comprises at least a metal film 130d and a polysilicon film 130a, and an impurity is introduced twice into the polysilicon film 130a, so that the impurity concentration at the upper part of it becomes higher than that of its lower part.
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