| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which deteriora tion of a memory cell can be detected accurately and appropriate care for suppressing progress of deterioration can be performed for the deteriorated memory cell. SOLUTION: In a non-volatile semiconductor memory 10 which can write, erase, and read information electrically, deterioration of a memory cell 11 is detected by comparing a erasing time Te required to erase information of the memory cell 11 with a reference erasing time Ti stored previously in a reference erasing time memory 15, and progress of deterioration is suppressed. |
