| 发明名称 |
LOW DIELECTRIC CONSTANT SIDEWALL SPACER USING NOTCH GATE PROCESS |
| 摘要 |
A notched gate MOS device includes either an encapsulated low dielectric material or encapsulated air or a vacuum at the bottom of a notched gate. Due to the low dielectric constant at the site of interface between the gate and the source/drain, the capacitance loss at that site is significantly reduced.
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| 申请公布号 |
US2002096695(A1) |
申请公布日期 |
2002.07.25 |
| 申请号 |
US20010768525 |
申请日期 |
2001.01.24 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AJMERA ATUL C.;FUNG KA HING (SAMUEL);KU VICTOR;SCHEPIS DOMINIC J. |
| 分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L27/10;H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L29/43 |
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