| 摘要 |
PURPOSE: A method for forming a passivation layer of a semiconductor device is provided to enhance the reliability of a device by preventing the characteristic deterioration of a transistor device due to the hydrogen including in a nitride film. CONSTITUTION: An interlayer insulation film(11) is formed on a semiconductor substrate(10) and the first metal wiring(12) connecting to the devices electrically is placed on the substrate. An inter metal dielectric layer(13) is formed on the interlayer insulation layer(13) while covering the first metal wiring. The second wiring(15) connecting to the first wiring through a plug(14) is formed on the inter metal dielectric layer. The passivation layer consisting of the first and the second layer(16,17) is covered the second wiring. The first layer is formed by a USG(Undoped Silicate Glass) of a good gap-filling characteristic and the second layer is formed by a nitride film of a good barrier characteristic against a mobile ion. The source gases for forming the nitride film are SiH4, NH3, and N2. In order to remove the hydrogen component, SiH4 is replaced with SiF4 and NH3 is replaced with NF3.
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