发明名称 |
Method for forming memory array and periphery contacts using a same mask |
摘要 |
Contacts for an electronic device are formed by providing a substrate (12) that has at least two access line structures (16) for a memory array (14) and a periphery structure (20) for a peripheral circuit (18) to the memory array (14). A first insulative layer (40) is formed outwardly of the substrate (12), the access line structures (16), and the periphery structure (20). A contact area of the periphery structure (20) is exposed through the first insulative layer (40) while maintaining the first insulative layer (40) over at least a contact overlap portion (48) of the access line structures (16). A second insulative layer (60) is formed outwardly of the substrate (12), the access line structures (16), the periphery structure (20), and the first insulative layer (40). A self-aligned contact hole (70) overlapping the contact overlap portion (48) of the access line structures (16) and a periphery contact hole (72) overlapping the contact area (46) of the periphery structure (20) are formed through the second insulative layer (60) with a same mask (74). A self-aligned contact (80) is formed in the self-aligned contact hole (70) and a periphery contact (82) is formed in the periphery contact hole (72).
|
申请公布号 |
US6423627(B1) |
申请公布日期 |
2002.07.23 |
申请号 |
US19990407560 |
申请日期 |
1999.09.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CARTER DUANE E.;HWANG MING J. |
分类号 |
H01L21/4763;H01L21/60;H01L21/768;H01L21/8242;H01L21/8244;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|