| 摘要 |
<p>A vertical type semiconductor device having a semiconductor substrate and at least one gate electrode structure formed in the semiconductor substrate for controlling a current flow across the semiconductor substrate. The semiconductor substrate is formed by a silicon substrate (11), a silicon carbide (12) or diamond layer epitaxially deposited on the silicon substrate (11), and a silicon layer (13) epitaxially deposited on the silicon carbide (12) or diamond layer. Recesses are formed in the silicon layer (13) and gate electrodes (15) are provided in the recesses via silicon oxide films (14). Source or emitter regions (16) are formed in portions of the silicon layer (13) which are brought into contact with the silicon oxide films (14) by inverting the conductivity of these portions. Source or emitter electrodes (17) are provided on the source or emitter regions (16), and a drain or collector electrode (18) is provided on a rear surface of the silicon substrate (11). <IMAGE> <IMAGE></p> |
