发明名称 Non-charging critical dimension SEM metrology standard
摘要 An SEM measurement standard for measuring linewidths of 0.1 microns and below utilizes two different conducting materials in order to prevent charging effects. The top material is selected to use grain morphology to focus secondary electrons, and to obtain improved image contrast. The inventive standard is comprised of materials which are commonly used in semiconductor manufacturing and which do not cause contamination of fabrication facilities.
申请公布号 US6420702(B1) 申请公布日期 2002.07.16
申请号 US20000611641 申请日期 2000.07.07
申请人 ADVANCED MICRO DEVICES, INC. 发明人 TRIPSAS NICHOLAS H.;SINGH BHANWAR;TEMPLETON MICHAEL K.
分类号 G01B15/00;H01J37/28;(IPC1-7):H01J37/28 主分类号 G01B15/00
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