| 摘要 |
PURPOSE: A method for fabricating a storage node electrode of a semiconductor device is provided to increase capacitance of a storage node electrode by forming polysilicon layers having different doping density on a sacrificial oxide layer and removing only the polysilicon layer of high density. CONSTITUTION: The first interlayer dielectric(30) is formed on a substrate(10). A bit line and a contact plug(40a,40b) and a bit line(50) are formed thereon. The second interlayer dielectric(60) is deposited on a whole surface of the above structure. A sacrificial oxide layer(70) is formed on the whole surface of the above structure. An opening portion is formed within the sacrificial oxide layer(70). The first polysilicon layer of low density is deposited on the sacrificial oxide layer(70). The second polysilicon layer of high density is deposited on the first polysilicon layer. The third polysilicon layer is deposited thereon. A polishing process for the third, the second, and the first polysilicon layers is performed. A storage node electrode is formed by removing the second polysilicon layer.
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