| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a damage of transistors due to accumulation of charges by forming a prevention layer on a metal line. CONSTITUTION: A transistor having a gate electrode(24) and a source/drain region(22) is formed at a semiconductor substrate(21). An interlayer dielectric(26) having a contact plug(27) is formed on the entire surface of the resultant structure. A metal line(28) is formed to connect the contact plug(27). A prevention layer(29) as a plasma insulator is formed on the metal line(28) by using an ozone stripper.
|
