发明名称 SEMICONDUCTOR LASER UNIT
摘要 PROBLEM TO BE SOLVED: To provide a new semiconductor laser unit that can correspond to the need for improving heat radiation performance, and for increasing the number of lead wires caused by increasing the size of a light-emitting diode and a light-receiving element, and can improve problems due to a manufacturing process. SOLUTION: The light-emitting diode and light-receiving element mounted to an island 1 are led to the outside of a chip circuit by lead sections 4 and 4 formed on flexible sheets 5a and 5b, thus maintaining the same external dimensions as before, at the same time, increasing mass in the island 1, and hence greatly improving the heat radiation performance. Width dimensions at a lead section 4 are greatly reduced, thus greatly increasing the number of lead wires. Thickness dimensions at the lead section 4 are greatly reduced, thus contributing to the increase of mass in the island 1, and hence improving the heat radiation performance. When improvement in the heat radiation performance and increase in the number of the lead wires are not required, the external dimensions are reduced for additional miniaturization.
申请公布号 JP2002198605(A) 申请公布日期 2002.07.12
申请号 JP20000395247 申请日期 2000.12.26
申请人 CHICHIBU FUJI CO LTD 发明人 BONO KENJI;KOMATSU MASARU;TAKANO YOSHIHIRO;MAKITA HIROYUKI
分类号 G11B7/125;H01L25/16;H01S5/022;H01S5/024 主分类号 G11B7/125
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