发明名称 AXIAL LEAD TYPE SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To raise a bonding strength by suppressing occurrence of voids. SOLUTION: A rough part 6 is formed on the surface of a header 4 of a lead wire 3 facing a semiconductor chip 1. Forming of the rough path 6 allows air bubbles of a solder 2 which are easy to concentrate into a central part 3a of the header 4 to disperse toward a peripheral part 3b for escaping. Thus, occurrence of voids is suppressed. The increase of a contact area with the solder 2 due to formation of the rough part 6 raises a bonding strength.</p>
申请公布号 JP2002198479(A) 申请公布日期 2002.07.12
申请号 JP20000397335 申请日期 2000.12.27
申请人 NIPPON INTER ELECTRONICS CORP 发明人 KAMINAO TAKESHI;OKI TOMOAKI;SHO SHINKIN
分类号 H01L23/48;(IPC1-7):H01L23/48 主分类号 H01L23/48
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