发明名称 |
AXIAL LEAD TYPE SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To raise a bonding strength by suppressing occurrence of voids. SOLUTION: A rough part 6 is formed on the surface of a header 4 of a lead wire 3 facing a semiconductor chip 1. Forming of the rough path 6 allows air bubbles of a solder 2 which are easy to concentrate into a central part 3a of the header 4 to disperse toward a peripheral part 3b for escaping. Thus, occurrence of voids is suppressed. The increase of a contact area with the solder 2 due to formation of the rough part 6 raises a bonding strength.</p> |
申请公布号 |
JP2002198479(A) |
申请公布日期 |
2002.07.12 |
申请号 |
JP20000397335 |
申请日期 |
2000.12.27 |
申请人 |
NIPPON INTER ELECTRONICS CORP |
发明人 |
KAMINAO TAKESHI;OKI TOMOAKI;SHO SHINKIN |
分类号 |
H01L23/48;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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