| 摘要 |
PURPOSE: Provided is a method for manufacturing a bipolar plate which is a component of small fuel cell, using semiconductor material instead of graphite which has been conventionally used. CONSTITUTION: The method comprises growing a thin film of silicon carbide with thickness of 10 nm to 100 micrometer(according to the purpose) on a silicon substrate, using silanes gas(SiH4, SiCl4, and so on), hydrocarbon gas(CH4, C2H4, C3H8, and so on), and organic silane compounds(CH3SiH3, CH3SiCl3, (CH3)6Si2, (CH3)4Si, and so on) as raw material by chemical vapor deposition, plasma chemical vapor deposition, sputtering, and liquid phase methods. In method for etching Si or SiC/Si, dry etching uses gases such as SF6, CF4, NF3, and CCl4, and wet etching uses gases such as KOH, NaOH, and HF. |
