RARE-EARTH ELECTRICAL CONTACTS FOR SEMICONDUCTOR DEVICES

摘要

Electrical contact to group III-V semiconductor materials used in fabricating semiconductor devices are provided. The electrical contacts are particularly suitable for high temperature electronic applications, and are fabricated by utilizing a substrate (10) or epitaxial layer made of a group III-V semiconductor material. A contact layer is formed on a surface of the substrate (10) or epitaxial layer, with the contact layer (14) composed of a rare earth compound such as dysprosium phosphide or dysprosium arsenide. A cap layer (16) of a group III-V semiconductor material can be formed on the contact layer (14).