FERROELECTRIC TYPE NON-VOLATILE SEMICONDUCTOR MEMORY, AND ITS DRIVING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric type non-volatile semiconductor memory in which capacity can be made larger without being restricted by minimum machining size and further high integration is realized. SOLUTION: A ferroelectric type non-volatile semiconductor memory comprises (A) bit lines BL1 (B) a transistor TR1 for selection, (C) memory units MU1N of N pieces (N>=2) constituted respectively of memory cells MC1NM of M pieces (M>=2), and (D) plate lines PLm of M×N lines, the memory units MU1N of N pieces are laminated through inter-layer insulator layers 26.