| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which has a small propagation loss, a large electrode reflection coefficient, of which the bandwidth can be extended and which can be downsized. SOLUTION: The surface acoustic wave device 1 is characterized in that a ZnO thin film 3 is epitaxially grown on an R face sapphire substrate 2, an IDT 4 is formed on the ZnO thin film 3 in a way that the electrode finger extends in a direction of the c axis of the ZnO thin film 3 and a fundamental wave of an SH wave is propagated in a direction orthogonal to the c axis direction.
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