发明名称 SELF-DESTRUCTION TYPE SEMI-CONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To execute an operation for a required period by the limited battery capacity of a power supply source. SOLUTION: An open/short-circuit detecting circuit 50 and a differential amplifier circuit 52 are constituted of a MOS transistor circuit and a reference voltage setting circuit 51 is of a capacity circuit. A digital output buffer circuit 53 is constituted of a CMOS inverter and a control circuit or element 4a is of a CMOS selector circuit. When the power supply source 6 is removed or short-circuited, voltage lowering is detected by a voltage change detecting circuit 5a. Thus, the control circuit or element 4a is operated by turning-on, a destroying circuit 2 is connected to a destruction capacitor 3 and memory data of a semi-conductor integrated circuit 1 is destroyed by the destroying circuit 2.
申请公布号 JP2000181804(A) 申请公布日期 2000.06.30
申请号 JP19980360680 申请日期 1998.12.18
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 OGAWA SHIGEO;AOYAMA KAZUO
分类号 G06F12/14;G06F21/06;G06F21/24;G06K19/077;G06K19/10;H01L21/822;H01L21/8238;H01L27/04;H01L27/092 主分类号 G06F12/14
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