发明名称 A MEMORY MODULE TEST SYSTEM WITH REDUCED DRIVER OUTPUT IMPEDANCE
摘要 A memory module test system with reduced driver output impedance. A test system includes a plurality of driver circuits, each of which is coupled to a transmission line on a loadboard. The loadboard includes a socket for insertion of the memory module to be tested. A test signal is generated and driven onto a transmission line by a driver circuit. A duplicate test signal is driven by a separate driver circuit onto a separate transmission line. The transmission lines carrying the test signal and duplicate test signal are electrically shorted on the loadboard. Electrically shorting these transmission lines effectively reduces their impedance by half. Multiple test signals generated by the test system are shorted in this manner in order to allow the electrical environment of the test system to more closely approximate that of the application environment of the tested memory module.
申请公布号 WO0115174(A9) 申请公布日期 2002.07.11
申请号 WO2000US22660 申请日期 2000.08.17
申请人 SUN MICROSYSTEMS, INC. 发明人 TRAN, DONG;JEFFREY, DAVID;KROW-LUCAL, STEVEN, C.
分类号 G01R31/28;G01R31/319;G06F12/16;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
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