| 摘要 |
<p>A silicon single crystal wafer having been grown by the Czochralski method, characterized in that the whole wafer belongs to N-region formed in the outside of OSF being generated in a ring form during heat treatment and also is free of a fault region being detected by Cu deposition; and a method for producing a silicon single crystal, characterized in that the single crystal is grown in the above non-fault region. The silicon single crystal wafer belongs to none of V-region being rich in vacant pores, OSF region and I-region being rich in interstitial Si and thus is improved in electric characteristics such as oxide film breakdown strength. The method allows the production of the above wafer under stable production conditions.</p> |
