| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a characteristic of the semiconductor device from being deteriorated and to improve reliability, by performing a metal interconnection contact process while a poly 2 layer having a stack layer composed of a polysilicon layer and a tungsten silicide layer is used as a buffer layer. CONSTITUTION: The poly 2 layer having a stack structure composed of the polysilicon layer(31) and the tungsten silicide layer(33) is patterned on a semiconductor substrate. The first interlayer dielectric is formed on the resultant structure including the poly 2 layer. A predetermined portion of the first interlayer dielectric is etched to expose the poly 2 layer in a poly 4 contact region. Poly 4 connected to the poly 2 layer is formed on the resultant structure. The second interlayer dielectric is formed to planarize the resultant structure. The second interlayer dielectric, the poly 4 and the tungsten silicide layer are etched to form a metal interconnection contact hole. A contact plug(43) filling the contact hole is formed. A metal interconnection(45) coupled to the contact plug is formed.
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