| 摘要 |
PURPOSE: A method for fabricating a test pattern of a semiconductor device is provided to form a wordline while a shallow photoresist layer is used, by using an oxide layer as an etch barrier layer in a process for etching a nitride layer as a hard mask layer of the wordline and by using a photoresist layer as an etch barrier layer of the oxide layer. CONSTITUTION: The first pattern generating a step is formed. An interlayer dielectric is formed on the first pattern while an insulation material having excellent fluidity is used to control the step. The second pattern is formed on the interlayer dielectric. The second pattern is electrically measured to estimate pattern uniformity.
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