发明名称 |
Förfarande vid tillverkning av bipolär transistorstruktur |
摘要 |
The present disclosure describes a method to reduce the base-collector capacitance swing and increase the collector-to-base breakdown voltage in a bipolar high-frequency transistor. First a highly doped silicon substrate (1) of a first doping is selected for forming a transistor emitter region. Then layers (5, and 6, 7) are deposited with a second and a first doping for forming a base/collector structure. Subsequently a collector mesa structure is formed by removing silicon on base contact areas using a photoresist mask on top of a layer of for instance an oxide (9) so that the additional layers also serve as a mask for the silicon etch. An etching method is selected to facilitate the form of the collector to be made narrow closer to a collector contact surface, thereby creating a bipolar collector-up high frequency transistor with a shaped collector. This improves both the capacitance swing and the breakdown voltage. The present disclosed method describes the manner in which this is implemented for producing a discrete mesa-etched RF power transistor. |
申请公布号 |
SE517711(C2) |
申请公布日期 |
2002.07.09 |
申请号 |
SE19990004383 |
申请日期 |
1999.12.02 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) |
发明人 |
TORKEL *ARNBORG;TED *JOHANSSON |
分类号 |
H01L21/331;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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