| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to guarantee the width of a polysilicon layer while the width of a cap nitride layer and a tungsten nitride layer are decreased, by etching the cap nitride layer and a tungsten silicide layer, by forming an insulation thin film on the sidewall of a gate structure and by etching the polysilicon layer while using the cap nitride layer as an etch barrier. CONSTITUTION: A gate insulation layer(11), the first conductive layer for a gate, the second conductive layer for the gate and a capping insulation layer are sequentially deposited on a semiconductor substrate(10). The capping insulation layer and the second conductive layer for the gate are sequentially patterned. The insulation thin film is formed on both sidewalls of the patterned capping insulation layer and the second conductive layer for the gate. The first conductive layer for the gate and the gate insulation layer are sequentially etched by using the insulation thin film as an etch barrier. The insulation thin film is eliminated. The first conductive layer for the gate is etched to have an inclined surface to form a gate pattern by using the capping insulation layer as an etch barrier. A low density impurity ion implantation process is performed regarding the resultant structure having the gate pattern. A spacer(17) is formed on both sidewalls of the gate pattern. A high density impurity ion implantation process is performed regarding the resultant structure to form a source/drain region(18a,18b).
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