| 摘要 |
PURPOSE: A semiconductor device is provided to sense a magnetic field in the semiconductor device using a GMR(Giant Magneto Resistive) phenomenon, and to measure the strength of the magnetic field by measuring resistance as variations of electrical resistance according to the strength of the magnetic field are different. CONSTITUTION: A metal layer(25) contacting with a magnetic field sensor(23) is formed on an upper part of a first interlayer insulating layer(21). An inductor(29) is arranged on an upper part of a second interlayer insulating layer(27). The second interlayer insulating layer flattens an upper part of the metal layer. The inductor is not formed on an upper part of the magnetic field sensor, accordingly, a magnetic field is applied to the magnetic field sensor from an upper part of the magnetic field sensor. The magnetic field sensor senses the magnetic field generated in the inductor of an RF(Radio Frequency) semiconductor device and measures the strength of the magnetic field then feeds back the measured magnetic field, to control the magnetic field.
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