| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to minimize a bridge phenomenon caused by an excessive growth of hemispherical grain(HSG) generated in the upper portion of the capacitor, by controlling the formation of HSG of high density ions in the upper portion of a material layer for a lower electrode in a portion to which ions are implanted and by normally forming HSG on the material layer in a portion into which ions are not implanted. CONSTITUTION: A semiconductor substrate(10) is prepared. A cap oxide layer(15) and a hard mask layer(16) are deposited on the semiconductor substrate. A predetermined portion of the hard mask layer and the cap oxide layer is patterned to form a lower structure. The material layer(18) for the lower electrode is deposited on the lower structure. An oxide layer(19) is formed on the material layer for the lower electrode. The oxide layer is polished to expose the material layer for the lower electrode and is planarized. Predetermined impurity ions are implanted into the planarized resultant structure. The oxide layer is removed. An embossing structure is formed on the entire surface of the material layer for the lower electrode to form the lower electrode. The lower electrode is separated.
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