| 摘要 |
PURPOSE: A method for fabricating a photomask is provided to reduce a focus difference between photoresist layers and to improve a pattern characteristic of a Lamu key, by decreasing the thickness of the photoresist layer while a mask having half tone transmittance is used. CONSTITUTION: The first photoresist layer(21) is applied on a wafer and is selectively patterned. The second photoresist layer(22) is applied on the patterned first photoresist layer by a predetermined thickness. The second photoresist layer is selectively patterned to form a Lamu key pattern by using the mask(23) having half tone transmittance while the thickness of the second photoresist is decreased.
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