| 摘要 |
PURPOSE: A method for fabricating a metal pad of a semiconductor device is provided to improve adhesion, by forming a metal plug in an interlayer dielectric while the surface of the metal plug is protruded by a predetermined height so that the adhesion area of a metal layer deposited on the metal plug is enlarged. CONSTITUTION: A metal layer of a pad type is formed on a semiconductor substrate(11). The interlayer dielectric(13) of a predetermined thickness is deposited on the metal layer. A predetermined portion of the interlayer dielectric is selectively etched to form several via holes in the interlayer dielectric. The via hole is filled with a metal layer to form the metal plug(15). The surface of the interlayer dielectric is etched by a predetermined thickness to make the metal plug protrusive.
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