| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which prevents generation of leakage currents, without using a protective diode in a method for manufacturing a semiconductor device where the edge part of a diaphragm is rounded by using isotropic electrochemical etching. SOLUTION: The width of a wiring 5 for applying a voltage is made narrower than the width W of a dicing plate, so that the wiring 5, which becomes a cause of generation of a leakage current when dicing cut, can be completely eliminated. As a result, residue of the wiring 5 does not exist, after the dicing, and the wiring 5 does not stick also on the ruptured surface of a chip. Hence a method for manufacturing a pressure sensor can be provided where a leakage current is not generated, without using the protective diode which is arranged for preventing a leakage current in the conventional technique.
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