| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetron plasma magnetic field generator, capable of controlling an angle of a line of magnetic force on a wafer surface for obtaining uniformity of etching. SOLUTION: The magnetron plasma magnetic field generator comprises a dipole ring magnet, having a plurality of columnar anisotropic segment magnets disposed in a ring state, and each of the segment magnets is split in the length direction of the ring magnet, and the temperature of the divided segment magnet is controlled. |
