| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device, having a multilevel metallization and its fabricating method, in which a contact hole for connecting upper and lower interconnections can be formed accurately, and the reliability of the multilevel metallization is enhanced. SOLUTION: A lower silicon oxide film, at upper silicon oxide film, and a silicon nitride film sandwiched between are formed on an SOG film, and a contact hole is formed, while limiting the enlarged opening thereof, in the upper silicon oxide film using the silicon nitride film as an etching stopper, thus preventing enlarged opening from spreading up to the SOG film.
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