| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage semiconductor device, in which information is not lost or rewritten readily by an electron captured into a silicon nitride film directly above the source and drain. SOLUTION: The semiconductor device comprises memory transistors, each comprising a drain 7 and a source 8 formed in the surface of a semiconductor substrate 1, an insulation film 5 formed over the drain and source, and a gate electrode provided on the insulation film wherein a region 14 impeding movement of electrons is provide at a part of the gate insulation film between the source and drain.
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