| 摘要 |
PURPOSE: An image sensor capable of enlarging a photo-diode area and a manufacturing method thereof are provided to enlarge an effective photo-diode area without enlarging a photo-diode area in a semiconductor substrate so that photo-sensitivity may be improved. CONSTITUTION: An image sensor comprises a first conductive semiconductor substrate(40), isolation layers(41) formed on the first conductive semiconductor substrate(40), a photodiode(44) made of an n-type dopant region and a p-type dopant region formed in the first conductive semiconductor substrate(40), a gate electrode(43) mounted on a gate insulating layer(42), an interlayer dielectric(48) coating the isolation layers(41), the photodiode(44), and the gate electrode(43), and a semiconductor layer(49) as a photodetector formed on the interlayer dielectric(48) to overlap the isolation layers(41) and the gate electrode(43) and connected with the photodiode(44) through the interlayer dielectric(48). At this point, the semiconductor layer(49) increases the effective surface of the photodiode(44), thereby improving photo-sensitivity.
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