| 摘要 |
This invention relates to a method for tungsten chemical vapor deposition on a semiconductor substrate, comprising positioning said substrate within a deposition chamber, heating said substrate and depositing under low pressure the tungsten on the substrate by contacting the latter with a mixture of gases flowing through the deposition chamber comprising tungsten hexafluoride (WF6), hydrogen (H2) and at least one carrier gas. The mixture of gases comprises also silane (SiH4) with such a flow rate that the flow ratio WF6/SiH4 is from 2.5 to 6, the flow rate of WF6 being from 30 to 60 sccm, while the pressure in the deposition chamber is maintained from 0.13 to 5.33 kPa (1 and 40 Torr).
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