发明名称 |
METHOD FOR MANUFACTURING PHASE SHIFTING MASK |
摘要 |
PURPOSE: A fabrication method of a PSM(Phase Shifting Mask) is provided to prevent defects of patterns and to simplify the manufacturing processes. CONSTITUTION: A field region and an active region are defined by forming a field oxide(22) on a quartz substrate(21). A light shield layer(23) is formed on the active region of the quartz substrate. A phase shifting layer(25) is formed by sequentially implanting a dopant having different dose and energy and by annealing. At this time, the phase shifting layer(25) has a continuous refractive index in accordance with a depth. An oxynitride layer is used as the phase shifting layer(25) by using nitrogen as the dopant.
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申请公布号 |
KR20020051710(A) |
申请公布日期 |
2002.06.29 |
申请号 |
KR20000081177 |
申请日期 |
2000.12.23 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HONG IK;SIM, GYEONG JIN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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