发明名称 METHOD FOR MANUFACTURING PHASE SHIFTING MASK
摘要 PURPOSE: A fabrication method of a PSM(Phase Shifting Mask) is provided to prevent defects of patterns and to simplify the manufacturing processes. CONSTITUTION: A field region and an active region are defined by forming a field oxide(22) on a quartz substrate(21). A light shield layer(23) is formed on the active region of the quartz substrate. A phase shifting layer(25) is formed by sequentially implanting a dopant having different dose and energy and by annealing. At this time, the phase shifting layer(25) has a continuous refractive index in accordance with a depth. An oxynitride layer is used as the phase shifting layer(25) by using nitrogen as the dopant.
申请公布号 KR20020051710(A) 申请公布日期 2002.06.29
申请号 KR20000081177 申请日期 2000.12.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HONG IK;SIM, GYEONG JIN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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